SiC MOSFET-Sanan Semiconductor

Introduction

Excellent switching and high temperature DC characteristics

Silicon carbide MOSFETs are core components of next-generation energy conversion systems, enabling key system benefits such as miniaturization, lighter weight and higher integration.

Hunan Sanan Semiconductor has integrated global scientific research wisdom and local mass production experience in the development of Silicon Carbide MOSFET technology. Manufacturing process challenges, such as low resistance ohmic contacts, appropriately activated dopants in ion implantation/annealing, and optimized gate oxidation, have all been addressed.

By independently mastering many core technologies, Hunan Sanan Semiconductor's automotive-grade 1200V/16mΩ silicon carbide MOSFETs have overcome reliability issues and passed AEC-Q101 certification, and have been validated in the modules of key new energy automotive customers; and industrial-grade 1700V/1Ω and 1200V/32mΩ silicon carbide MOSFETs have been shipped on a small scale in the field of photovoltaics and charging piles.

Part Number	Product Status	Type	Qualification	V_DS(max) (V)	I_D (A)	R_DS(on)@T_j=25℃(mΩ)	R_DS(on)@T_j=175℃(mΩ)	T_{j (max)}(℃)	Package
AMS1200075M2	Evaluation	SiC MOSFETs Bare die	Automotive	1200	35	68	115	175	Bare die
SMS1200075M2	Evaluation	SiC MOSFETs Bare die	Industry	1200	35	68	115	175	Bare die
SMS1200032M2	Evaluation	SiC MOSFETs Bare die	Industry	1200	77	28	45	175	Bare die
SMS1200020M2	Evaluation	SiC MOSFETs Bare die	Industry	1200	111	20	35	175	Bare die
AMS1200018B	Active	SiC MOSFETs Bare die	Automotive	1200	124	18	30	175	Bare die
AMS1200016B	Active	SiC MOSFETs Bare die	Automotive	1200	132	16	27	175	Bare die
SMS1701000K	Active	SiC MOSFETs Bare die	Industry	1700	6.8	700	1500	175	Bare die
SMS1701000K	Active	SiC MOSFETs Discrete device	Industry	1700	6.8	700	1500	175	TO247-3 L
AMS1200075M2	Evaluation	SiC MOSFETs Discrete device	Automotive	1200	35	68	115	175	TO247-4 L
SMS1200075M2	Evaluation	SiC MOSFETs Discrete device	Industry	1200	35	68	115	175	TO247-4 L
SMS1200032M2	Evaluation	SiC MOSFETs Discrete device	Industry	1200	77	28	45	175	TO247-4 L
SMS1200020M2	Evaluation	SiC MOSFETs Discrete device	Industry	1200	111	20	35	175	TO247-4 L