Wide Band Gap power devices make your electric-vehicle energy system lead the industry
Nowadays, electric vehicles have become one of the most important ways for modern people to travel, and the automotive-grade power chips in their power systems are becoming more and more important in the minds of automotive powertrain design engineers. Hunan Sanan Semiconductor has deployed a vertically integrated silicon carbide industry chain to support high-voltage, high-current and high-temperature system design, helping engineers design the efficient, low-consumption and competitive electric vehicles needed in the market.
Hunan Sanan Semiconductor has released a Silicon Carbide 1200V MOSFET product that continues to support the transition to 800V high voltage platforms for electric vehicles. The power system of electric vehicles can break through the temperature and voltage limitations of traditional devices to achieve faster switching speeds and higher power densities. The power system using silicon carbide MOSFETs is smaller, lighter, and more efficient, which reduces power loss by nearly 80%, and also extends the vehicle's driving distance by 10%, effectively alleviating the "range anxiety" of vehicle owners. "The power system is smaller, lighter and more efficient, reducing power loss by nearly 80%.
Capacity-rich super wafer fabrication plants provide a constant capacity boost to the compound semiconductor industry. Wafer process technology is moving from 150mm to 200mm, further enhancing the cost-effectiveness of large-scale manufacturing.
Comprehensively covering the whole industry chain from crystal materials to device packaging, serving customers with 20 years of experience in large-scale manufacturing of compound semiconductors, and providing flexible and diversified business cooperation modes.
Hunan Sanan Semiconductor implements the international standard quality management system, has passed the IATF 16949 system certification, and the products have passed the AEC-Q101 certification.
