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SiC Substrate & Epitaxy


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Industry-leading flexibility and scale

With more than 20 years of experience in the development and manufacturing of compound semiconductor materials, Hunan Sanan Semiconductor offers Silicon Carbide (SiC) substrate and epitaxial technologies that meet the industry's requirements for low defect rates and uniformity.

Hunan Sanan Semiconductor offers the ability to grow n-type and p-type epitaxial layers on 150mm n-type conductive SiC substrates, with the capacity to meet the rapidly growing demand for SiC power devices in the automotive and industrial markets.

You will be working with Hunan Sanan Semiconductor on the basis of the best and most innovative wide bandgap materials.

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