Sanan Semiconductor Base Project is committed to building a third-generation semiconductor industry chain R&D and manufacturing base with independent intellectual property rights based on silicon carbide and other wide-bandwidth materials, and its products can be widely used in new energy vehicles, photovoltaic energy storage, charging piles, power supply and other fields after the project is put into operation.
In June 2021, Phase I of Sanan Semiconductor Base with a total investment of 2.3 billion USD was put into operation, and in July 2022, Phase II of Sanan Semiconductor Base was started.
At present, the silicon carbide super factory built by Sanan in Changsha, Hunan Province, Phase I of the project has been mass-produced, and the production capacity of 6-inch SiC wafers has reached 300,000 wafers/year. Phase II of the project is expected to light up and pass through the line by the end of 2024, when Phase I&II will contribute to the production capacity together, and the whole project will have the overall capacity of 360,000 6-inch SiC wafers and 480,000 8-inch SiC wafers per year after reaching the production capacity completely.
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Established: Jul. 2020
Investment: $2.3B
Area: 667,000㎡
Integrated production capacity:
Phase I 6" SiC wafer production capacity up to 300,000 wafers/year
After phase II reaches production, the project has a combined full capacity of
6" SiC wafers 360,000 wafers/year, 8" SiC wafers 480,000 wafers/year
