Hunan Sanan Semiconductor Base Project is committed to building a third-generation semiconductor industry chain R&D and manufacturing base with independent intellectual property rights based on silicon carbide and other wide-bandwidth materials, and its products can be widely used in new energy vehicles, photovoltaic energy storage, charging piles, power supplies and motors, etc. The first phase of the project was put into operation in June 2021 with a total investment of RMB 16 billion.
In June 2021, the first phase of Hunan Sanan Semiconductor Base with a total investment of 16 billion yuan was put into operation, and in July 2022, the second phase of Hunan Sanan Semiconductor Base was started.
At present, Sanan in Hunan Changsha construction of silicon carbide super factory, the first phase of the project capacity has reached 6-inch silicon carbide wafers 200,000 / year, the second phase of the project is expected to be through the first half of this year. After the second phase reaches production, the project will have a total capacity of 360,000 6-inch SIC wafers/year and 480,000 8-inch SIC wafers/year.
Established: Jul. 2020
Investment: $2.3B
Area: 667,000㎡
Integrated production capacity:
Phase I 6" SiC wafer production capacity up to 200,000 wafers/year
After phase II reaches production, the project has a combined full capacity of
6" SiC wafers 360,000 wafers/year, 8" SiC wafers 480,000 wafers/year
