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碳化硅 MOSFET 是下一代能量转换系统的核心部件,实现了关键的系统优势,例如小型化、更轻的重量和更高的集成度。
湖南三安半导体整合全球科研智慧和本地大规模量产经验,进行碳化硅 MOSFET 技术研发,制造工艺的挑战,如低电阻欧姆接触、离子注入/退火中适当激活的掺杂剂以及优化的栅极氧化等都已得到解决。
通过自主掌握众多核心技术,湖南三安半导体的车规级 1200V/16mΩ 碳化硅 MOSFET 攻克了可靠性问题,并通过 AEC-Q101 认证,已在重点新能源汽车客户模块验证中;工规级 1700V/1Ω 和 1200V/32mΩ 碳化硅 MOSFET 已在光伏及充电桩领域小规模出货。
Part Number
|
Product Status |
Type |
Qualification |
VDS(max) (V) |
ID (A) |
RDS(on)@Tj=25℃ (mΩ) |
RDS(on)@Tj=175℃ (mΩ) |
Tj (max) (℃) |
Package |
---|---|---|---|---|---|---|---|---|---|
SMS0650065B |
Evaluation | SiC MOSFETs Bare die | Industry | 650 | 41 | 65 | 80 | 175 | Bare die |
AMS0650050B |
Active | SiC MOSFETs Bare die | Automotive | 650 | 45 | 50 | 62 | 175 | Bare die |
SMS0650027B |
Active | SiC MOSFETs Bare die | Industry | 650 | 83 | 27 | 34 | 175 | Bare die |
AMS0650035B |
Active | SiC MOSFETs Bare die | Automotive | 650 | 60 | 35 | 49 | 175 | Bare die |
AMS1200075B |
Active | SiC MOSFETs Bare die | Automotive | 1200 | 41 | 75 | 105 | 175 | Bare die |
SMS1200075B |
Evaluation | SiC MOSFETs Bare die | Industry | 1200 | 35 | 75 | 115 | 175 | Bare die |
SMS1200032B |
Active | SiC MOSFETs Bare die | Industry | 1200 | 77 | 32 | 45 | 175 | Bare die |
SMS1200020B |
Active | SiC MOSFETs Bare die | Industry | 1200 | 111 | 20 | 37 | 175 | Bare die |
AMS1200018B |
Active | SiC MOSFETs Bare die | Automotive | 1200 | 124 | 18 | 30 | 175 | Bare die |
AMS1200016B |
Active | SiC MOSFETs Bare die | Automotive | 1200 | 132 | 16 | 27 | 175 | Bare die |
SMS1701000B |
Active | SiC MOSFETs Bare die | Industry | 1700 | 6.8 | 1000 | 1500 | 175 | Bare die |
SMS1701000K |
Active | SiC MOSFETs Discrete device | Industry | 1700 | 6.8 | 1000 | 1500 | 175 | TO247-3L |
SMS0650065M |
Evaluation | SiC MOSFETs Discrete device | Industry | 650 | 41 | 65 | 80 | 175 | TO247-4L |
AMS0650050P |
Evaluation | SiC MOSFETs Discrete device | Automotive | 650 | 42 | 50 | 62 | 175 | TO263-7L |
AMS0650050M |
Active | SiC MOSFETs Discrete device | Automotive | 650 | 45 | 50 | 62 | 175 | TO247-4L |
AMS0650035M |
Active | SiC MOSFETs Discrete device | Automotive | 650 | 60 | 35 | 49 | 175 | TO247-4L |
SMS0650027M |
Active | SiC MOSFETs Discrete device | Industry | 650 | 83 | 27 | 34 | 175 | TO247-4L |
AMS1200075P |
Evaluation | SiC MOSFETs Discrete device | Automotive | 1200 | 41 | 75 | 105 | 175 | TO263-7L |
AMS1200075K |
Evaluation | SiC MOSFETs Discrete device | Automotive | 1200 | 41 | 75 | 105 | 175 | TO247-3L |
AMS1200075M |
Active | SiC MOSFETs Discrete device | Automotive | 1200 | 41 | 75 | 105 | 175 | TO247-4L |
SMS1200075M |
Evaluation | SiC MOSFETs Discrete device | Industry | 1200 | 41 | 75 | 105 | 175 | TO247-4L |
SMS1200032MA |
Evaluation | SiC MOSFETs Discrete device | Industry | 1200 | 77 | 32 | 45 | 175 | TO247-4LA |
AMS1200032M |
Evaluation | SiC MOSFETs Discrete device | Automotive | 1200 | 77 | 32 | 45 | 175 | TO247-4L |
SMS1200032M |
Active | SiC MOSFETs Discrete device | Industry | 1200 | 77 | 32 | 45 | 175 | TO247-4L |
SMS1200020M |
Active | SiC MOSFETs Discrete device | Industry | 1200 | 111 | 20 | 37 | 175 | TO247-4L |